Analysis of GaN HEMT Degradation under RF Overdrive Stress
编号:114 访问权限:仅限参会人 更新:2021-07-21 20:06:18 浏览:271次 口头报告

报告开始:2021年08月27日 09:45(Asia/Shanghai)

报告时间:15min

所在会场:[Room1] Oral Session 1 [S1&S2] WBG Device Modeling, Simulation and Reliability

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摘要
  In this paper, the electrical characteristics of GaN HEMT devices before and after RF overstress have been investigated. The experimental results show that the drain current of GaN HEMT decreases by 35.6% from 877 mA to 564mA after RF overstress. Moreover, after the experiment, the threshold voltage has a 0.26-V positive shift, and the maximum transconductance decreases. The gate-to-source current and gate-to-drain current increases by three times more than that of fresh ones. The gate-lag characteristics also deteriorates with the increase of experimental time. After measuring the high frequency performance, the return loss of the device degrades. Based on the measurement of leakage current, the height of Schottky barrier before and after the experiment was calculated and the captured charge density was extracted as 1.11×1014 cm-2 by combining with the threshold voltage drift.
关键词
high electron mobility transistor (HEMT),Gallium nitride (GaN),Radio frequency (RF)
报告人
YiQiang Chen
The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology

YuHan Xie
South China University of Technology

稿件作者
YuHan Xie South China University of Technology
Yan Ren The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology
YiQiang Chen The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology
Chang Liu The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology
Rongsheng Chen South China University of Technology
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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