Datasheet Driven Turn Off Overvoltage Prediction for Silicon Carbide Power MOSFETs Based on Theoretical Analysis
编号:1 访问权限:仅限参会人 更新:2021-07-21 19:49:39 浏览:332次 口头报告

报告开始:2021年08月27日 08:30(Asia/Shanghai)

报告时间:15min

所在会场:[Room1] Oral Session 1 [S1&S2] WBG Device Modeling, Simulation and Reliability

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摘要
This paper presents a turn-off overvoltage prediction method for SiC MOSFET based on device datasheet parameters. First, the turn-off process of a SiC MOSFET is analyzed, and the key parameters associated with turn-off overvoltage are identified. Second, a quadratic equation containing loop parasitic inductance, load current, gate resistance and other parameters from datasheet is derived under several reasonable  assumptions. Third, simulation results and experimental results are presented to validate the proposed method. It is found that the prediction value is always larger and the accuracy can reach 15%. Finally, the error between the prediction method and experimental results is analysed, which proves that the prediction is always conservative.
关键词
wide bandgap devices,turn off,overvoltage
报告人
Cheng Qian
Huazhong University of Science and Technology

稿件作者
Cheng Qian Huazhong University of Science and Technology
智强 王 华中科技大学
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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