Datasheet Driven Turn Off Overvoltage Prediction for Silicon Carbide Power MOSFETs Based on Theoretical Analysis
更新：2021-07-21 19:49:39 浏览：332次
This paper presents a turn-off overvoltage prediction method for SiC MOSFET based on device datasheet parameters. First, the turn-off process of a SiC MOSFET is analyzed, and the key parameters associated with turn-off overvoltage are identified. Second, a quadratic equation containing loop parasitic inductance, load current, gate resistance and other parameters from datasheet is derived under several reasonable assumptions. Third, simulation results and experimental results are presented to validate the proposed method. It is found that the prediction value is always larger and the accuracy can reach 15%. Finally, the error between the prediction method and experimental results is analysed, which proves that the prediction is always conservative.
wide bandgap devices,turn off,overvoltage