报告清单

[45]Modeling and Analysis of the Switching Characteristics Difference for Paralleling SiC MOSFETs in Multichip Power Modules

Wenyu Li Fudan University； China； Shanghai； 200433

P /P3 2021年08月27日 12:30~12:35

公开张贴报告

[44]Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier

Mengling Tao University of Electronic Science and Technology of China

P /P3 2021年08月27日 12:05~12:10

公开张贴报告

[43]Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

Yu Sun Institute of Microelectronics； Peking University；Chun Han Peking University

P /P3 2021年08月27日 12:00~12:05

公开张贴报告

[42]An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor Structure

Longyang Yu Xi'an Jiaotong University

P /P5 2021年08月27日 13:25~13:30

公开张贴报告

[41]A Survey on Modeling of SiC IGBT

Yuwei Wu Xi’an Jiaotong University

P /P3 2021年08月27日 12:40~12:45

公开张贴报告

[40]A GaN-based High Power-density Power Optimizer for Solar-powered Aircraft Applications

peng chen Nanjing University of Aeronautics and Astronautics；College of Automation

P /P5 2021年08月27日 12:10~12:15

公开张贴报告

[39]Influence of CucorAl wire bonding on reliability of SiC devices

Fang Chao Zhuzhou CRRC Times Semiconductor Co., Ltd.

P /P4 2021年08月27日 12:25~12:30

公开张贴报告

[38]The Method for Decoupling the Parasitic Inductance of the Laminated Busbar with SiC MOSFETs in Parallel

Shaolin Yu HeFei University of Technology

P /P2 2021年08月27日 12:25~12:30

公开张贴报告

[36]EMI Noise Reduction in GaN-based Full-bridge LLC Converter

Yue Cao Student Xi'an Jiaotong University

P /P4 2021年08月27日 12:50~12:55

公开张贴报告

[35]The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC

Ruijun Zhang XiaMen University；Department of Physics

P /P1 2021年08月27日 12:10~12:15

公开张贴报告

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

[45]Modeling and Analysis of the Switching Characteristics Difference for Paralleling SiC MOSFETs in Multichip Power Modules

[44]Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier

[43]Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

[42]An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor Structure

[41]A Survey on Modeling of SiC IGBT

[40]A GaN-based High Power-density Power Optimizer for Solar-powered Aircraft Applications

[39]Influence of CucorAl wire bonding on reliability of SiC devices

[38]The Method for Decoupling the Parasitic Inductance of the Laminated Busbar with SiC MOSFETs in Parallel

[36]EMI Noise Reduction in GaN-based Full-bridge LLC Converter

[35]The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC

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