报告清单

[95]Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs

Zhaoxiang Wei Southeast University, Nanjing, China

Room2 /S7&S8 2021年08月27日 16:30~16:45

仅限参会人口头报告

[94]Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETs

Wei Huang University of Electronic Science and Technology of China

Room2 /S5&S6 2021年08月27日 09:00~09:15

仅限参会人口头报告

[93]A Layout Optimization Method to Reduce Commutation Inductance of Multi-Chip Power Module Based on Genetic Algorithm

Yu Zhou PhD Student Zhejiang University

Room1 /S3&S4 2021年08月27日 15:45~16:00

仅限参会人口头报告

[92]

Chao Liu Technical University of Denmark

Room2 /S7&S8 2021年08月27日 15:15~15:30

仅限参会人口头报告

[91]Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET

Haihong Qin Nanjing University of Aeronautics and Astronautics

Room2 /S5&S6 2021年08月27日 10:00~10:15

仅限参会人口头报告

[90]Analysis of an Output Series High Voltage Gain Impedance Source Circuit Based on SiC Switch

Qing Cheng China；School of Electrical Engineering and Automation； Harbin Institute of Technology； Harbin

Room1 /S3&S4 2021年08月27日 14:15~14:30

仅限参会人口头报告

[89]A Compact Model for Si/SiC IGBT in LTspice with Experimental Validation

Md Maksudul Hossain Graduate Research As UNIVERSITY OF ARKANSAS

Room1 /S1&S2 2021年08月27日 09:15~09:30

仅限参会人口头报告

[88]Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs

Saravanan Dhanasekaran Research Scholar Indian Institute of Technology Madras

Room1 /S3&S4 2021年08月27日 15:00~15:15

仅限参会人口头报告

[87]Intelligent DC- and AC Power-Cycling Platform for Power Electronic Components

Kaichen Zhang Research Assistant Aalborg Univeristy

Room1

仅限参会人口头报告

[86]Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions

Xuan Li University of Electronic Science and Technology of China

Room1 /S1&S2 2021年08月27日 10:30~10:45

仅限参会人口头报告

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

[95]Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs

[94]Multiple UIS Ruggedness of 1200V Asymmetric Trench SiC MOSFETs

[93]A Layout Optimization Method to Reduce Commutation Inductance of Multi-Chip Power Module Based on Genetic Algorithm

[92]

[91]Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET

[90]Analysis of an Output Series High Voltage Gain Impedance Source Circuit Based on SiC Switch

[89]A Compact Model for Si/SiC IGBT in LTspice with Experimental Validation

[88]Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs

[87]Intelligent DC- and AC Power-Cycling Platform for Power Electronic Components

[86]Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions

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