报告清单

[13]Analytical Averaged Loss Model of a Three-level NPC-type Converter With SiC Devices

Xinyue Guo Huazhong University of Science and Technology；School of Electrical and Electronic Engineering

P /P3 2021年08月27日 12:10~12:15

公开张贴报告

[12]Dual-Side Three-stage Asymmetric Phase Shift Strategy for Bidirectional Inductive Power Transfer System with SiC Power Module

Haowen Chen student Huazhong University of Science and Technology；School of Electrical and Electronic Engineering

P /P5 2021年08月27日 12:05~12:10

公开张贴报告

[10]Power Loss Characterictics comparsion of the Modular Multilevel Multilevel Converter Based on Based on Si IGBT and SiC MOSFET

Tianxiang Yin Huazhong University of Science and Technology

P /P3 2021年08月27日 12:35~12:40

公开张贴报告

[9]Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETs

Hua Mao Chongqing university

P /P4 2021年08月27日 12:15~12:20

公开张贴报告

[8]DC Transform Circuit Design Based on Multiplier Rectification

Penghui Yin Huazhong University of Science and Technology；State Key Laboratory of Advanced Electromagnetic Engineering and Technology

P /P5 2021年08月27日 13:05~13:10

公开张贴报告

[7]The Influence of Gate Resistances on the Turn-on Behaviors of Si/SiC Hybrid Switch

Xiaofeng Jiang Chongqing university

P /P3 2021年08月27日 12:20~12:25

公开张贴报告

[6]An Optimal Design Scheme of Intermediate Bus Voltage for two-stage LLC Resonant Converter Based on SiC MOSFET

feng wang Huazhong University of Science and Technology；State Key Laboratory of Advanced Electromagnetic Engineering and Technology

P /P2 2021年08月27日 12:50~12:55

公开张贴报告

[4]An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETs

Jiawei Li Huazhong University of Science and Technology

P /P4 2021年08月27日 12:05~12:10

公开张贴报告

[3]A Compact 175℃ High Temperature Gate Driver with Isolated Power Supply and Advanced Protection for HybridPACK Drive SiC Power Module

Cheng Qian Huazhong University of Science and Technology

P /P2 2021年08月27日 12:45~12:50

公开张贴报告

[2]650V 4H-SiC VDMOS with Additional N Region_A Simulation Study

Xiuxiu Gao CORESING SEMICONDUCTOR TECHNOLOGY CO . LTD

P /P1 2021年08月27日 12:20~12:25

公开张贴报告

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

[13]Analytical Averaged Loss Model of a Three-level NPC-type Converter With SiC Devices

[12]Dual-Side Three-stage Asymmetric Phase Shift Strategy for Bidirectional Inductive Power Transfer System with SiC Power Module

[10]Power Loss Characterictics comparsion of the Modular Multilevel Multilevel Converter Based on Based on Si IGBT and SiC MOSFET

[9]Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETs

[8]DC Transform Circuit Design Based on Multiplier Rectification

[7]The Influence of Gate Resistances on the Turn-on Behaviors of Si/SiC Hybrid Switch

[6]An Optimal Design Scheme of Intermediate Bus Voltage for two-stage LLC Resonant Converter Based on SiC MOSFET

[4]An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETs

[3]A Compact 175℃ High Temperature Gate Driver with Isolated Power Supply and Advanced Protection for HybridPACK Drive SiC Power Module

[2]650V 4H-SiC VDMOS with Additional N Region_A Simulation Study

重要日期

会议日期

主办单位

承办单位

联系方式

历届会议