报告清单

[116]Analysis of the influence of vibration and thermal vibration coupling on the power module

JiaJia Guan Huazhong University of Science and Technology

Room1 /S1&S2 2021年08月27日 10:00~10:15

仅限参会人口头报告

[115]Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique

Hao Lu School of Microelectronics； Xidian University

Room2 /S5&S6 2021年08月27日 08:45~09:00

仅限参会人口头报告

[114]Analysis of GaN HEMT Degradation under RF Overdrive Stress

YiQiang Chen The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology；YuHan Xie South China University of Technology

Room1 /S1&S2 2021年08月27日 09:45~10:00

仅限参会人口头报告

[113]Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up Applications

Wuji Meng Nanjing University of Aeronautics and Astronautics

Room2 /S7&S8 2021年08月27日 14:00~14:15

仅限参会人口头报告

[112]Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode

Zhanwei Shen Chinese Academy of Sciences；Institute of Semiconductors

Room2

公开张贴报告

[111]Impacts of Power Level on Parasitic Capacitance in Copper-Foiled Medium-Voltage Inductors

Hongbo Zhao Aalborg University

Room1

仅限参会人口头报告

[110]Characteristics of SiC MOSFET in a Wide Temperature Range

Mengyu Zhu Xi'an Jiaotong University

Room1 /S1&S2 2021年08月27日 10:45~11:00

仅限参会人口头报告

[109]Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures

Yifan Zhang Huazhong University of Science and Technology

Room1 /S3&S4 2021年08月27日 15:30~15:45

仅限参会人口头报告

[107]Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer

Atsushi Shimbori Research Assistant University of Texas at Austin

Room2

仅限参会人口头报告

[106]A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter

Wen Zhaoliang student Harbin Institute of Technology

Room2 /S7&S8 2021年08月27日 14:30~14:45

仅限参会人口头报告

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

[116]Analysis of the influence of vibration and thermal vibration coupling on the power module

[115]Improved Breakdown Characteristics for AlN/GaN/InGaN Coupling Channel HEMTs with SiNx Removal and Backfill Technique

[114]Analysis of GaN HEMT Degradation under RF Overdrive Stress

[113]Soft-Switching Resonant Active Clamp Flyback based-on GaN HEMTs for MHz High Step-Up Applications

[112]Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode

[111]Impacts of Power Level on Parasitic Capacitance in Copper-Foiled Medium-Voltage Inductors

[110]Characteristics of SiC MOSFET in a Wide Temperature Range

[109]Comparison Study of Parasitic Inductance, Capacitance and Thermal Resistance for Various SiC Packaging Structures

[107]Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer

[106]A Single-Stage Modular DCX with High Voltage Conversion Ratio Based on High Frequency LLC Resonant Converter

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