Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
编号:112 访问权限:公开 更新:2021-08-23 23:51:36 浏览:174次 张贴报告

报告开始:暂无开始时间(Asia/Shanghai)

报告时间:暂无持续时间

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摘要
The p-type islands embedded into the drift layer were found effective in shielding the contacts and reducing the leakage current even at high temperature. Two types of SBD-integrated trench gate MOSFETs with p-type buried-layer (BLSI-MOS), are proposed by numerical simulation using SENTAURUS TCAD. Even though the BLSI-MOS has embedded SBD, the active area of MOSFET is not consumed due to the effect of buried grid. Thus, they demonstrate the advantage of specific on-resistance (Ron,sp) reduction over the developed double-trench MOSFET without SBD. However, the position of the buried-layer (BL) with respect to the contacts has an influence on the electrical properties of MOSFET and SBD. Meanwhile, the BL is short to source contacts or floating so as to justify the connection's effects on the dynamic characteristics. These results will provide guidance for design and modeling of 4H-SiC SBD-integrated trench MOSFET.
 
关键词
Silicon Carbide,trench MOSFET,schottky barrier diode,electric field,short-circuit,high temperature
报告人
Zhanwei Shen
Chinese Academy of Sciences;Institute of Semiconductors

Zhanwei Shen received his B.S. degree from Xidian University, Xi’an, China, in 2012, and the Ph.D. degree from Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, in 2017. He is currently an Assistant Professor with Institute of Semiconductors, Chinese Academy of Sciences. His research and development activities include SiC-based power device design, gate-oxide growth and characterization, and relevant device fabrication.

稿件作者
Fei Yang State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Co., Ltd.
Lixin Tian State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co., Ltd.
Zhanwei Shen Chinese Academy of Sciences;Institute of Semiconductors
Guoguo Yan Chinese Academy of Sciences;Institute of Semiconductors
Xingfang Liu Chinese Academy of Sciences;Institute of Semiconductors
Wanshun Zhao Institute of Semiconductors, Chinese Academy of Sciences
Lei Wang Institute of Semiconductors, Chinese Academy of Sciences
Guosheng Sun Chinese Academy of Sciences;Institute of Semiconductors
Junmin Wu State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Co., Ltd.
Feng Zhang Department of Physics, Xiamen University
Yiping Zeng Chinese Academy of Sciences;Institute of Semiconductors
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重要日期
  • 会议日期

    08月25日

    2021

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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