摘要清单
我的稿件
296
Proton Irradiation Effects on High Voltage 4H-SiC Junction Barrier Schottky Diodes终稿

Hao Yuan, Qingwen Song*, Xiaoyan Tang, Shuai Yang, Yimeng Zhang, Chao Han, Lei Yuan, Yuming Zhang, Yimen Zhang

全体主题 > Harsh environment (e.g. high temperature) operation and reliability

295
GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure终稿

Xin Wang, Chong Wang*

全体主题 > Device characterization and modeling

294
A Novel High-Frequency and High-Efficiency Synchronous Buck Converter with a Small Coupled Inductor终稿

Chuanyu Xu, Haoyu Li*, Jihong Zhang, Chuanlong Dong

全体主题 > Very high efficiency and compact converters

293
A High Efficiency 2.5 kW Bidirectional FB-CLTC Resonant DC–DC Converter with Large Voltage Ratio终稿

YiFeng Wang*, Bo Chen

全体主题 > Very high efficiency and compact converters

291
Characterization and Detailed Analysis of The Crosstalk With SiC MOSFET终稿

yang jing*, feng gao, Huadong LI, Suhong CHEN

全体主题 > SOAs including short-circuit, spike, and transient tolerance

290
A Phase-Leg Full SiC Power Module Used in Vienna Rectifiers终稿

cheng zhao, Wang Laili*

全体主题 > Packaging, power modules, and ICs

289
A Novel Packaging Method Using Flexible Printed Circuit Board for High-Frequency SiC Power Module终稿

Yang Fengtao, Wang Laili*, Cheng Zhao, Qi Zhiyuan, Wang Jianpeng, Zhang Yang, Chen Yang

全体主题 > Packaging, power modules, and ICs

288
Three dimensional integration of GaN-HEMT-based DC-DC converter using planar inductor as a substrate终稿

Zhiyuan Qi*, Zhizhao Niu, Laili Wang, Kangping Wang, Cheng Zhao, Yunqing Pei, Jianpeng Wang

全体主题 > Very high efficiency and compact converters

287
An Integrated Gate Driver with Active Delay Control Method for Series Connected SiC MOSFETs终稿

Panrui Wang*, Feng Gao

全体主题 > Gate drive and other auxiliary circuits

285
A Model Parameter Optimization Method of SiC Power MOSFET终稿

Yang Wen, Yang Yuan*, Wang Yan

全体主题 > Device characterization and modeling

284
Novel Tiny 1.2kV SiC MOSFET Gate Driver终稿

Khuong Vinh Nguyen*, Nam Nguyen-Quang

全体主题 > Gate drive and other auxiliary circuits

284
Inverter with hybrid devices of Silicon and GaN MOSFET in PV system终稿

Yaqian Zhang, Jianzhong Zhang*, Jin Zhao

全体主题 > Applications in renewable energy and storage, transportation, industrial drives, and grid power

283
Design of Gate Driver and Power Device Evaluation Platform for SiC MOSFETS终稿

Jin Zhao, Jianzhong Zhang*, Yaqian Zhang, Haifu Wu

全体主题 > Gate drive and other auxiliary circuits

282
First-principles investigations of point defects at 4H-SiC/SiO2 interface终稿

Chenguang Liu, Yuehu Wang*, Yutian Wang, Zhiqiang Cheng

全体主题 > Device characterization and modeling

281
Substrate Termination Technique for Monolithically Integrated Lateral GaN-on-Si Power Devices摘要待审

Hanyuan Zhang*

全体主题 > Device characterization and modeling

重要日期

  • 会议日期

    05月17日

    2018

    至

    05月19日

    2018

  • 12月08日 2017

    摘要截稿日期

  • 01月30日 2018

    摘要录用通知日期

  • 02月10日 2018

    初稿截稿日期

  • 02月10日 2018

    终稿截稿日期

  • 05月19日 2018

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE POWER ELECTRONIC SOCIETY
中国电源学会
中国半导体产业创新联盟
承办单位
西安交通大学
西安电子科技大学
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