摘要清单
我的稿件
240
Two Stage eGaN FET-Based Isolated Class E DC-DC Converter终稿

jiandong dai*, ying li, xinbo ruan

全体主题 > Hard-switched and soft-switched applications

239
Design of a 20MHz eGaN FET-Based Isolated Class E DC-DC Converter终稿

jiandong dai*, ying li, xinbo ruan

全体主题 > Hard-switched and soft-switched applications

238
A novel Nitrogen Passivation method for improving the SiO2/SiC interface properties终稿

Qingwen Song*, TANG Guannan, Xiao-Yan Tang, JIA Yifan, ZHANG Yuming, ZHANG Yimen

全体主题 > Gate dielectrics and surface passivation

237
Capacitor Voltage Ripple Reduction of A 4-Level Hybrid Clamped Converter Using Switching State Redundancy for Medium-voltage Drive终稿

Jianyu Pan*, Risha Na

全体主题 > Applications in renewable energy and storage, transportation, industrial drives, and grid power

236
Study on interfacial properties of SiC MOS with Barium终稿

Jia-Min Jie, Xiao-Yan Tang*, Yu-Ming Zhang, Yi-Fan Jia

全体主题 > Gate dielectrics and surface passivation

234
Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment终稿

MINHAN MI*

全体主题 > Device structures and fabrication techniques

233
GaN-based High Efficiency and High Power Density DC/DC Power Supply终稿

全体主题 > Very high efficiency and compact converters

232
A Gate Driving Circuit Surviving 200℃ for Silicon Carbide MOSFET终稿

Miaoxin Jin, Qiang Gao*

全体主题 > Gate drive and other auxiliary circuits

231
Ultralow Angle Bevel-Etched Junction Termination Extension for High Voltage SiC Power Devices终稿

Kun Zhou*, Hui Li, Qiang Li, Liang Xu, Lin Zhang, Lei Gao, Xin Cui, Long Zhang, Kun Yang, Yang Zhou, Tao Li, Gang Dai

全体主题 > Device characterization and modeling

230
Current Sharing Analysis of Paralleled GaN HEMT Via Feedback Theory终稿

Mao Zhang*, Weiping Zhang

全体主题 > Device characterization and modeling

229
Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor终稿

Haojie Li, Qingwen Song*, Yuming Zhang, Xiao-Yan Tang, Dongxun Li

全体主题 > Harsh environment (e.g. high temperature) operation and reliability

228
Voltage Control Strategy for Fast Response in Dual Active Bridge Converters with SiC-MOSFET Module终稿

全体主题 > Applications in renewable energy and storage, transportation, industrial drives, and grid power

227
Low temperature epitaxial deposition of GaN layers on sitall ceramic substrates终稿

Dimiter Alexandrov et. all.*

全体主题 > Device structures and fabrication techniques

226
High Performance Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Diffusion-Controlled Interface Oxidation Technique终稿

Jiejie Zhu*

全体主题 > Gate dielectrics and surface passivation

224
Influence of Parasitic Capacitance on Transient Current Distribution in Paralleled SiC MOSFETs终稿

Junji Ke*, Huazhen Huang, Peng Sun, James Abuogo, Zhibin Zhao, Xiang Cui

全体主题 > Device characterization and modeling

重要日期
  • 会议日期

    05月17日

    2018

    05月19日

    2018

  • 12月08日 2017

    摘要截稿日期

  • 01月30日 2018

    摘要录用通知日期

  • 02月10日 2018

    初稿截稿日期

  • 02月10日 2018

    终稿截稿日期

  • 05月19日 2018

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE POWER ELECTRONIC SOCIETY
中国电源学会
中国半导体产业创新联盟
承办单位
西安交通大学
西安电子科技大学
联系方式
移动端
在手机上打开
小程序
打开微信小程序
客服
扫码或点此咨询