For 56 years, IRPS has been the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all other parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic systems through an improved understanding of both the physics of failure as well as the application environment.
IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.
Circuits, Products, and Systems
Circuit Reliability – Includes digital, mixed-signal,
power and RF applications; design for reliability,
variability-aware design.
Circuit Aging Simulation – Includes compact
modeling; statistical methods
Product IC Reliability – Includes burn-in; defect
detection; on-chip sensors; modeling
Consumer Electronics Reliability – Includes smart
phones; wearable devices; tablets; healthcare devices
Electronic System Reliability – Includes automotive,
space, communications, medical, energy, and
photovoltaic applications; screening techniques;
reliability-aware circuit design and optimization, system
monitoring; failure root cause determination; modeling
methodologies, product qualification vs reliability.
Soft Errors – Includes neutron and alpha particle SER;
multi-bit SER/SEU; mitigation techniques; simulation
ESD and Latchup – Includes component and systemlevel
ESD design; modeling and simulation
3D Assembly – Includes multichip modules; 3D
integration with TSV; thermomechanical stress; wafer
thinning effects
Packaging – Includes chip-package interaction; fatigue;
power dissipation issues, Reliability 2.5D and 3D IC packaging and interconnects;
Devices, Processing, and Materials
Transistors – Includes hot carrier phenomena; biastemperature
instability; random telegraph noise; advanced
transistor scaling, variability, Ge and III-V channels
Gate Dielectrics – Includes TDDB modeling; reliability of
novel gate dielectrics; modeling of progressive breakdown;
gate dielectric reliability for III-V FETs
Beyond CMOS Devices – Includes reliability of tunnel
FETs, transistors with 2D semiconductors (graphene,
MoS2), Ferroelectric FETs, and spintronics
Compound/Optoelectronics – Includes reliability of wide
bandgap (GaN, SiC) power devices, optoelectronics, and
silicon photonics, Reliability of far infrared detectors
Back-End Reliability – Electromigration; Joule heating;
stress migration; low-k dielectric breakdown; middle-ofthe-line
reliability, MIM/MOM capacitors
Process Integration – Includes new process-related
reliability issues; foundry reliability challenges
Failure Analysis – Includes evidence of new failure
mechanisms; advances in failure analysis techniques
Memory – Includes DRAM and NVM; failure mechanisms
in novel memory devices including 3D Flash and ReRAM
Photovoltaics – Includes reliability of solar cell devices in
silicon, CdTe, CIGS, organics, multi-junctions, etc.
MEMS – Reliability of sensors and actuators; reliability
testing; analysis & modeling, BioMEMS
Abstract (Paper/Poster) Submission (due October 9, 2017): Your two-page original abstract submission should clearly and concisely present specific results and explain the importance of your work in the context of prior work. Use the IRPS document template available at www.irps.org. Notification of acceptance will be made by December 15, 2017. Full manuscripts of accepted papers will be due before the conference. Registration for the conference is required for the author presenting the paper. Late Paper Submission: Space permitting, full-length manuscripts with late-breaking news may be considered for inclusion in the conference/proceedings. Due January 8, 2018.
03月11日
2018
03月15日
2018
摘要截稿日期
初稿录用通知日期
初稿截稿日期
终稿截稿日期
注册截止日期
2028年03月26日 美国 Monterey
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2017 IEEE International Reliability Physics Symposium2016年04月17日 美国 Pasadena, CA, USA
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