活动简介
The International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA symposium), first held in 1983, gathers experts from all over the world and has always been fruitful and productive. Every year, scientists and engineers discuss and present the state-of-the-art technology R&D and macro development of the industry’s future. It is considered the most important event in Taiwan’s semiconductor industry and highly anticipated by local companies. Taking advantage of the information learned during the conference, the symposium hopes to create new opportunities for Taiwan’s semiconductor industry. The VLSI-TSA symposium is becoming more significant since Taiwan not only occupies a prominent position in the global semiconductor industry, but also is increasingly competitive globally in IC design technology and communications information products.
The VLSI-TSA symposium is proud to create a platform for enriching technical exchange and networking between experts from all over the world. The purpose is to bring together scientists and engineers actively engaged in research, development, and manufacturing on VLSI Technology, Systems and Applications to discuss the latest progress in this field.
Retrospect - from 1983 to 2003
• International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
• Initiated by Industrial Technology Research Institute in 1983, technical sponsored by IEEE.
• Focus mainly on VLSI Technologies, Circuits and Applications.
• Being held biannually.
• More than 6000 attendees were attracted between 1983-2003.
Evolution - starting 2005
• Starting 2005, the conference was divided into two consecutive conferences：
ÜInternational Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)
> Focusing on process and advanced technology.
> With oral presentations and short courses.
ÜInternational Symposium on VLSI Design, Automation, and Testing (VLSI-DAT)
> Focusing on design, design automation, and testing.
> With oral presentations, poster presentations, and tutorials.
• The two conferences are held annually in the last week of April with one-day overlap.
• More than 3500 attendees in the past 4 years ( 2006~2009 ) for the 2 conferences.
Recent VLSI-TSA & DAT symposia - from 2013 to 2018
• The two conferences are held annually in the last week of April with three-days overlap from 2013 to 2016 and four-days overlap till 2017.
• More than 4,500 attendees attended the VLSI-TSA & DAT symposia.
• In 2018, the number of attendees is around 900.
组委会
General Chair and Co-chair
Shinichi Takagi, Chair
The University of Tokyo, Japan
Chih-I Wu, Co-chair
Industrial Technology Research Institute, Taiwan
Advisory Committee
(Charles) Kin P. Cheung, NIST, USA
Yee-Chia Yeo, TSMC, Taiwan
Raj Jammy, Carl Zeiss, USA
Carlos Mazure, SOITEC, France
Chorng-Ping Chang, Applied Materials, USA
Michael Wu, TSMC, Taiwan
Steering Committee
Lewis Terman, IBM, USA
Morris Chang, TSMC, Taiwan
John Y. Chen, NVIDIA, USA
Tze-Chiang Chen, IBM, USA
Alice M. Chiang, Teratech, USA
Sanford Chu, XMC, China
Ben M.Y. Hsiao, IBM Emeritus, USA
Genda Hu, FocalTech Systems, Taiwan
Roger De Keersmaecker, RDK Consulting & Coaching, Belgium
G. P. Li, UC Irvine, USA
Rich Liu, Macronix International Co., Ltd., Taiwan
T. P. Ma, Yale Univ., USA
Tak H. Ning, IBM, USA
Jack Sun, TSMC, Taiwan
Paul P. Wang, Duke University, USA
Clement H. Wann, TSMC, Taiwan
H.-S. Philip Wong, Stanford University, USA
Ran H. Yan, Starix Technology, USA
Ping Yang, Intevac, USA
Hwa Nien Yu, IBM Emeritus, USA
Technical Program Committee
An Chen, Chair
IBM, USA
Shih-Chieh Chang, Chair
Industrial Technology Research Institute, Taiwan
-North America Subcommittee
Wilman Tsai, Chair
TSMC, USA
Jason Campbell, NIST, USA
Robert D. Clark, TEL Technology Center, America, LLC, USA
Peide Ye, Purdue University, USA
Angada Sachid, Applied Materials, USA
Lan Wei, University of Waterloo, Canada
Andrew C. Kummel, University of California, San Diego, USA
Suman Datta, University of Notre Dame, USA
Nicolas L. Breil, Applied Materials, USA
Tim Phung, IBM Almaden Research Center, USA
Sapan Agarwal, Sandia National Laboratories, USA
-Europe Subcommittee
Ionut Radu, Chair
SOITEC, France
Jean-Pierre Raskin, Université catholique de Louvain, Belgium
Andrea Padovani, MDLab s.r.l., Italy
Carlo Reita, CEA-LETI, France
Robert Strenz, Infineon Technologies Austria AG, Austria
Mostafa Emam, INCIZE, Belgium
François Andrieu, CEA, France
-Asia Pacific Subcommittee
Hiroyuki Ota, Co-chair
National Institute of Advanced Industrial Science and Technology, Japan
Ru Huang, Co-chair
Peking University, China
Ming-Jinn Tsai, Co-chair
Industrial Technology Research Institute, Taiwan
Daniel Chen, UMC, Taiwan
Dai-Ying Lee, Macronix International Co., Ltd., Taiwan
Wen-Kuan Yeh, National Nano Device Laboratories, Taiwan
Chee-Wee Liu, National Taiwan University, Taiwan
Steve Chung, National Chiao Tung University, Taiwan
Bing-Yue Tsui, National Chiao Tung University, Taiwan
Kuan-Neng Chen, National Chiao Tung University, Taiwan
Chrong Jung Lin, National Tsing Hua University, Taiwan
Chenhsin Lien, National Tsing Hua University, Taiwan
Chih-Hao Chang, TSMC, Taiwan
Seiichiro Kawamura, Japan Science&Technology Agency(JST/CRDS), Japan
Toshifumi Irisawa, National Institute of Advanced Industrial Science and Technology (AIST), Japan
Jiro Ida, Kanazawa Institute of Technology, Japan
Satofumi Souma, Kobe University, Japan
Mansun Chan, Hong Kong University of Science and Technology, China
Zhiping Yu, Tsinghua University, China
Huaqiang Wu, Tsinghua University, China
Jin-Feng Kang, Peking University, China
Dongwon Kim, Samsung, Korea
Kin-Leong Pey, Singapore University of Technology and Design, Singapore
Saurabh Lodha, IITB, India
Hyoungsub Kim, Sungkyunkwan University, Korea
Jong-Ho Lee, Seoul National University, Korea
Local Organizing Committee (Industrial Technology Research Institute)
Chair: Emily Kuo
Co-chair: Wen-Chi Yang
General Secretariat: Emily Kuo
Secretariat:
Anny Huang
Caroline Huang
征稿信息
重要日期
征稿范围
The scope of papers requested in 2019 VLSI-TSA includes the following fields :
• Low power CMOS and embedded memory
• Foundry technology
• RF & THz process, device and integration technology
• Standalone memory: DRAM, FLASH, emerging memory technology
• Advanced process modules: e.g. gate stack, junction, strain/channel engineering, low-R
contact, low-C spacer/ILD,
interconnect technology, ALE and selective deposition, etc.
• Nanopatterning: Multiple patterning, Directed Self-Assembly, EUV, etc.
• Power and analog IC device and technology
• Advanced CMOS process and devices: Ge, SiGe, III-V, FinFET, GAA, 2D materials/1D
nanowires
• Material, process and device modeling
• TFT and organic electronics
• MEMS, imagers and sensors
• Advanced manufacturing technology, metrology and yield
• Reliability physics, characterization and test
• Advanced packaging and 2.5D/3D Integration
• Photonics and Beyond CMOS Technology
• Energy harvesting technology
• Wearable and loE enabling technologies
• Neuromorphic devices and materials for brain-inspired computing
• Quantum phenomena and information technologies
• Device technologies for deep learning applications
作者指南
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全部留言
重要日期
-
会议日期
04月22日
2019
至04月25日
2019
-
10月31日 2018
初稿截稿日期
-
12月28日 2018
初稿录用通知日期
-
01月15日 2019
终稿截稿日期
-
03月15日 2019
提前注册日期
-
04月25日 2019
注册截止日期
联系方式
- Anny Huang
- vl******@itri.org.tw
历届会议
-
2021年04月19日 台湾-中国 Hsinchu
2021 International Symposium on VLSI Technology, Systems and Applications -
2018年04月16日 台湾-中国
2018 International Symposium on VLSI Technology, Systems and Application
留言