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活动简介
The 13th International Workshop on Junction Technology (IWJT2013) will be held on June 6 - 7, 2013 in Kyoto, Japan. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interests of the community on a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists.
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Papers are solicited in, but not limited to the following Doping Technology --- Ion implantation, plasma doping, gas and solid doping Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, new activation annealing, lattice
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重要日期
  • 会议日期

    06月06日

    2013

    06月07日

    2013

  • 06月07日 2013

    注册截止日期

主办单位
IEEE Electron Devices Society - ED Japan Council ED Chapter Kansai Section ED Chapter
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