2017 17th International Workshop on Junction Technology IWJT

活动简介

The 17th International Workshop on Junction Technology (IWJT2017) will be held on June 1 - 2, 2017 in Kyoto, Japan. Since started in 2000, IWJT has been held annually in Japan or China. IWJT is an open forum focused on the needs and interests of the community on junction formation technology in semiconductors. In previous IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their latest research results, and exchange ideas with leading scientists.

征稿信息

重要日期

2017-04-14

摘要截稿日期

征稿范围

Papers are solicited in, but not limited to the following

Doping Technology --- Ion implantation, plasma doping, gas and solid doping
Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, new activation annealing, lattice damage and defects
Junction Technology for Devices --- CMOS devices, Power devices, Image sensors, Solar cells, etc.
Silicide and Contact Technology --- Silicide materials and salicide technology, embedded and elevated S/D, low barrier contact, surface pre-treatment
Characterization for Shallow Junction --- Physical and electrical characterization of junctions for 2D and 3D structures
Modeling and Simulation --- Modeling and simulation of shallow junction formation of CMOS
Advanced Equipment, Materials and Substrates for Junction Technologies