摘要清单
我的稿件
371
Influence of Parasitic Capacitances on Transient Current Distribution of Paralleled SiC MOSFETs终稿

Xiang Cui, Zhibin Zhao, Junji Ke*, Huazhen Huang, Peng Sun, James Abuogo

全体主题 > Device characterization and modeling

368
Three-phase Four-switch APF Model Predictive Control Based on Harmonic Free Detection摘要待审

YANG Li-xing*, CAI Xia, WANG Ying, HUANG Wei, TANG Zhen-hua, LUO Di

全体主题 > Device characterization and modeling

366
Error Analysis of Coaxial Shunt under AC Disturbance终稿

Chong Zhang*, Jing Wu, Qishuang Ma, Haiming Shao

全体主题 > Device characterization and modeling

364
Temperature Dependence of 1.2 kV 4H-SiC Power MOSFET Body Diode over Temperature Range of 90K to 603K终稿

Jinwei Qi*, Kai Tian, Zhangsong Mao, Song Yang, Wenjie Song, Anping Zhang

全体主题 > Device characterization and modeling

355
On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures终稿

Samuel Perkins*, Anastasios Arvanitopoulos, Konstantinos Gyftakis, Neophytos Lophitis

全体主题 > Device characterization and modeling

352
Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes终稿

Anastasios Arvanitopoulos*, Neophytos Lophitis, Mike Jennings, Konstantinos Gyftakis, Marina Antoniou, Samuel Perkins

全体主题 > Device characterization and modeling

345
Gallium Nitride Power Device Modelling using Deep Feed Forward Neural Networks终稿

Nikita Hari*, Soham Chatterjee, Archana Iyer

全体主题 > Device characterization and modeling

339
General Modeling and Loss Prediction of SiC Power Module终稿

ZhiDa Zhou, Qiongxuan Ge*, Lu Zhao, Bo Yang

全体主题 > Device characterization and modeling

337
Obtaining the Exact Electrical Parameters of Ohmic Contacts using a Novel Electrode Pairs (EPs) Design Method终稿

Huolin Huang*, Zhonghao Sun

全体主题 > Device characterization and modeling

336
4H-SiC Light Triggered Thyristor with Gradually Doped Thin n-base终稿

Xi Wang, Hongbin Pu*

全体主题 > Device characterization and modeling

318
A Lateral SiC SBD Temperature Sensor with Barrier Height Inhomogeneities终稿

Gu hang*

全体主题 > Device characterization and modeling

302
Transient Thermal Characteristics of Power Modules under Extreme Operation Conditions终稿

晶格 胡*

全体主题 > Device characterization and modeling

301
Online Junction Temperature Estimation using Integrated Temperature Sensor for SiC Modules终稿

Ping Liu*, Xing Zhang, Huai Wang, Haoze Luo, Frede Blaabjerg

全体主题 > Device characterization and modeling

295
GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure终稿

Xin Wang, Chong Wang*

全体主题 > Device characterization and modeling

重要日期
  • 会议日期

    05月17日

    2018

    05月19日

    2018

  • 12月08日 2017

    摘要截稿日期

  • 01月30日 2018

    摘要录用通知日期

  • 02月10日 2018

    初稿截稿日期

  • 02月10日 2018

    终稿截稿日期

  • 05月19日 2018

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE POWER ELECTRONIC SOCIETY
中国电源学会
中国半导体产业创新联盟
承办单位
西安交通大学
西安电子科技大学
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