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活动简介

A global high level forum aiming at promoting collaborative innovation of the whole industry chain including wide band gap semiconductor materials, equipments, devices and related application sponsored by China Advanced Semiconductor Industry Innovation Alliance (CASA). This forum will focus on roadmap, application needs, integrated innovation of wide bandgap semiconductor technology and other contents, divided into several chapters to make in-depth discussion.

征稿信息

重要日期

2016-07-15
摘要截稿日期
2016-09-25
初稿截稿日期
2016-10-15
初稿录用日期
2016-10-28
终稿截稿日期

征稿范围

 

1. SiC Power Electronic Devices Technology

  • SiC Substrate Growth Technology

  • SiC Homo-epitaxial Growth Technology

  • SiC Material Defects and Characterization

  • SiC Power Electronic Devices Technology

  • Reliability Issues in SiC Power Electronic Devices 

  • Packaging for SiC Power Electronic Devices

  • SiC Power Electronics Application

  • Market Research for SiC Power Electronic Technology

2. Power Electronic Devices based on GaN and other wide band-gap semiconductors

  • GaN Based Heterostructure Epitaxial Growth and Defects, and Stress Control on Large Size Substrate

  • GaN based Power Electronic Devices Technology

  • GaN substrate Meterials and Homogeneous Epitaxial with Thick Film

  • Reliability of GaN Power Electronic Devices

  • GaN Device Packaging Technology

  • GaN Power Electronics Application

  • Market Research of GaN Power Electronic Technology

  • Other Electronic Materials and Devices of Wide Bandgap Semiconductor

3. Wide Bandgap Semiconductors and a new generation of Mobile Communication Technology

  • High Efficiency GaN Microwave Wave Device Technology

  • Reliability of GaN Microwave Device

  • GaN Epitaxial Technology for High Efficiency Microwave Device

  • GaN Monolithic Microwave IC Design

  • Big Signal Equivalent Circuit Modeling and Physical Modeling of GaN Microwave Devices

  • Wide Band, High Efficiency, Linear Power Amplifier Design for Mobile Communication

4. Wide Bandgap Semiconductors and Solid-State Ultraviolet Devices

  • Wide Bandgap Semiconductor Ultraviolet Luminescent Material and Novel Substrate

  • Wide Bandgap Semiconductor Ultraviolet Detecting Material

  • Design and Growth of High Efficient Quantum Structure

  • High Efficiency Solid State Ultraviolet Light Emitting Device

  • High Sensitivity Ultraviolet Detection and Imaging Device

  • Light Extraction, Thermal Management and Reliability of UV Packaging and Modules

  • New Progress of Ultraviolet Light Source and Detection Application

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重要日期
  • 会议日期

    11月15日

    2016

    11月17日

    2016

  • 07月15日 2016

    摘要截稿日期

  • 09月25日 2016

    初稿截稿日期

  • 10月15日 2016

    初稿录用通知日期

  • 10月28日 2016

    终稿截稿日期

  • 11月17日 2016

    注册截止日期

主办单位
hina Solid-State Lighting Alliance (CSA)
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