活动简介

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

The 22nd SISPAD will be held on September 7-9, 2017 in Kamakura, Japan.

征稿信息

重要日期

2017-04-03
摘要截稿日期
2017-05-31
初稿录用日期
2017-06-30
终稿截稿日期

征稿范围

  • Modeling and simulation of all sorts of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new-material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices

  • Modeling and simulation of all sorts of semiconductor processes, including first-principles material design and growth simulation of nano-scale fabrication

  • Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability

  • Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications

  • Process/device/circuit co-simulation in context with system design and verification

  • Equipment, topography, lithography modeling

  • Interconnect modeling, including noise and parasitic effects

  • Numerical methods and algorithms, including grid generation, user-interface, and visualization

  • Metrology for the modeling of semiconductor devices and processes

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重要日期
  • 会议日期

    09月07日

    2017

    09月09日

    2017

  • 04月03日 2017

    摘要截稿日期

  • 05月31日 2017

    初稿录用通知日期

  • 06月30日 2017

    终稿截稿日期

  • 09月09日 2017

    注册截止日期

主办单位
Japan Society of Applied Physics - JSAP
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