International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.
The 22nd SISPAD will be held on September 7-9, 2017 in Kamakura, Japan.
Modeling and simulation of all sorts of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new-material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
Modeling and simulation of all sorts of semiconductor processes, including first-principles material design and growth simulation of nano-scale fabrication
Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
Process/device/circuit co-simulation in context with system design and verification
Equipment, topography, lithography modeling
Interconnect modeling, including noise and parasitic effects
Numerical methods and algorithms, including grid generation, user-interface, and visualization
Metrology for the modeling of semiconductor devices and processes
09月07日
2017
09月09日
2017
摘要截稿日期
初稿录用通知日期
终稿截稿日期
注册截止日期
2016年09月06日 德国 Nuremberg, Germany
2016年国际模拟半导体工艺和设备会议2013年09月03日 英国
2013年国际模拟半导体工艺和设备会议
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