活动简介

From its beginning in 1978 as the GaAs IC symposium, the IEEE Compound Semiconductor IC Symposium (CSICS) has evolved to become the preeminent international forum for developments in compound semiconductor integrated circuits and devices, embracing GaAs, InP, GaN, SiGe, and CMOS technology. Coverage includes all aspects of the technology, from materials, device fabrication, IC design, testing, and system applications. CSICS provides the ideal forum to present the latest results in high-speed digital, analog, microwave, millimeter wave, THz, mixed-mode, and optoelectronic integrated circuits. First-time papers addressing the utilization and application of InP, GaAs, GaN, Silicon, Germanium, SiGe, and other compound.

征稿信息

重要日期

2017-04-21
摘要截稿日期
2017-07-14
初稿录用日期
2017-07-21
终稿截稿日期

征稿范围

  • High performance devices such as GaN power conversion devices, 700 GHz SiGe HBTs & InP HEMTs

  • Novel devices such as tunnel FETs (TFETs), carbon nanotubes, MEMS, graphene & diamond transistors

  • Integration of III-V devices on Si

  • Optoelectronic and photonic devices such as optical modulators, lasers, photodetectors, and Silicon Photonics

  • Device and circuit modeling concepts and implementation / EM and EDA tools

  • Thermal management technologies, thermal simulation, and advanced packaging of high-power devices and ICs

  • Device and IC manufacturing processes, testing methodologies, & reliability

  • Analog, RF, mixed-signal, mm-wave, THz, power conversion and optoelectronic circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS

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重要日期
  • 会议日期

    10月22日

    2017

    10月25日

    2017

  • 04月21日 2017

    摘要截稿日期

  • 07月14日 2017

    初稿录用通知日期

  • 07月21日 2017

    终稿截稿日期

  • 10月25日 2017

    注册截止日期

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