From its beginning in 1978 as the GaAs IC symposium, the IEEE Compound Semiconductor IC Symposium (CSICS) has evolved to become the preeminent international forum for developments in compound semiconductor integrated circuits and devices, embracing GaAs, InP, GaN, SiGe, and CMOS technology. Coverage includes all aspects of the technology, from materials, device fabrication, IC design, testing, and system applications. CSICS provides the ideal forum to present the latest results in high-speed digital, analog, microwave, millimeter wave, THz, mixed-mode, and optoelectronic integrated circuits. First-time papers addressing the utilization and application of InP, GaAs, GaN, Silicon, Germanium, SiGe, and other compound.
High performance devices such as GaN power conversion devices, 700 GHz SiGe HBTs & InP HEMTs
Novel devices such as tunnel FETs (TFETs), carbon nanotubes, MEMS, graphene & diamond transistors
Integration of III-V devices on Si
Optoelectronic and photonic devices such as optical modulators, lasers, photodetectors, and Silicon Photonics
Device and circuit modeling concepts and implementation / EM and EDA tools
Thermal management technologies, thermal simulation, and advanced packaging of high-power devices and ICs
Device and IC manufacturing processes, testing methodologies, & reliability
Analog, RF, mixed-signal, mm-wave, THz, power conversion and optoelectronic circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS
10月22日
2017
10月25日
2017
摘要截稿日期
初稿录用通知日期
终稿截稿日期
注册截止日期
2016年10月23日 美国 Austin, USA
2016 IEEE Compound Semiconductor Integrated Circuit Symposium2014年10月19日 美国
2014年IEEE化合物半导体集成电路研讨会2013年10月13日 美国
2013 IEEE复合半导体集成电路研讨会
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