Starting in 1978 as the GaAs IC symposium, CSICS has evolved to become the preeminent international forum for developments in compound semiconductor integrated circuits, embracing GaAs, InP, GaN, SiGe, as well as nanoscale CMOS technology. Coverage includes all aspects of the technology from materials issues, device fabrication and modeling through IC design and testing, high volume manufacturing, and system applications. Specific technical areas of interest include: Innovative device concepts in emerging technologies GaN, InP, III-V on Si, Ge on Si, Graphene Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, and SiGe BiCMOS Power conversion circuits and technologies Optoelectronic and photonic devices and OEICs System applications Wireless handsets and base stations Vehicular and military RADAR High-speed digital systems Fiber optics and photonics Device and circuit modeling / EM and EDA tools Thermal simulation and advanced packaging of high-power devices and ICs Device and IC manufacturing processes, testing methodologies, and reliability
10月19日
2014
10月22日
2014
注册截止日期
2017年10月22日 美国
2017年IEEE复合半导体集成电路研讨会2016年10月23日 美国 Austin, USA
2016 IEEE Compound Semiconductor Integrated Circuit Symposium2013年10月13日 美国
2013 IEEE复合半导体集成电路研讨会
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