3D simulation on electric field distribution of basin insulator in 110kV GIS under very fast transient overvoltage
编号:569 访问权限:仅限参会人 更新:2022-08-29 16:19:20 浏览:90次 张贴报告

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摘要
The basin insulator is the main insulating component of GIS. The problem of frequent GIS failures caused by the rapid deterioration of basin insulator performance has not been completely solved in the electrical industry. Very fast transient overvoltage (VFTO) may be an important factor for the rapid deterioration of the insulation performance of basin insulators. Based on the finite element method, this research simulates the three-dimensional electric field of isolating switch in GIS. The electric field distribution of the basin insulator at different positions inside the isolating switch under the action of VFTO is calculated. The results show that when a sinusoidal voltage of 110kV is input, the voltage amplitude at the lumped port 1 on the bus side can reach 190kV; the voltage in the arc region at lumped port 2 rapidly decreases to 0; the voltage at the load-side lumped port 3 exhibits an oscillation attenuation change with an amplitude of 10kV and decays to 0 at about 500ns. Besides, the electric field distribution on the surface of basin insulator under the action of VFTO shows a trend of first increasing and then decreasing along the radial direction from the inside to the outside. And the electric field strength reaches a maximum at the intersection of the central area and the edge.
关键词
VFTO;,basin insulator;,electric field distribution
报告人
liuhao jiang
Xi’an Jiaotong University

稿件作者
Lin Cheng State Grid Shaanxi Electric Power Company Limited
liuhao jiang Xi’an Jiaotong University
Shengtao Li Xi'an Jiaotong University
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重要日期
  • 会议日期

    09月25日

    2022

    09月29日

    2022

  • 08月15日 2022

    提前注册日期

  • 09月10日 2022

    报告提交截止日期

  • 11月10日 2022

    注册截止日期

  • 11月30日 2022

    初稿截稿日期

  • 11月30日 2022

    终稿截稿日期

主办单位
IEEE DEIS
承办单位
Chongqing University
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