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741 / 2022-03-31 20:25:44
The Degradation Behaviors from Triple Junctions in IGBT Power Modules
partial discharge,electrical trees
5. High Voltage Insulation System: Liquid, Solid Dielectrics
终稿
Ziyue Yang / Xi'an Jiaotong University；State Key Laboratory of Electrical Insulation and Power Equipment
Kaixuan Li / State Key Laboratory of Electrical Insulation and Power Equipment；Xi'An Jiaotong University
Xinyu Jiang / State Key Laboratory of Electrical Insulation and Power Equipment；Xi'An Jiaotong University
Boya Zhang / State Key Laboratory of Electrical Insulation and Power Equipment；Xi'An Jiaotong University
Xingwen Li / Xi'an Jiaotong University；State Key Laboratory of Electrical Insulation and Power Equipment
The high voltage insulated gate bipolar transistors modules are widely used in different industrial fields, and the weakness of their electrical insulation usually starts at the gel-copper-ceramic triple junction. Partial discharges and electrical trees usually initiate from triple junctions, and develop at the ceramic-gel interface, eventually leading to insulation failure. The insulation performance at the triple junction directly affects the reliability of insulation in IGBT power device. Therefore, in this paper, the partial discharge characteristics and the development of electrical trees at the triple junction are investigated for the encapsulation structure composed of the direct bonded copper ceramic substrate and silicone gel under AC voltage. The results show that the phase-resolved partial discharge at the triple junction is symmetrically distributed between the pre-zero voltage and the peak voltage. As the electrical tree grows, the partial discharge pulse becomes more intense and concentrated. The electrical trees at the triple junction are mainly composed of filamentary channels and bubble-like cavities. The development of electrical trees shows two stages of growth and stagnation. This paper illustrates the insulation failure process of the triple junction in the power module insulation structure.
重要日期

  • 会议日期

    09月25日

    2022

    至

    09月29日

    2022

  • 08月15日 2022

    提前注册日期

  • 09月10日 2022

    报告提交截止日期

  • 11月10日 2022

    注册截止日期

  • 11月30日 2022

    初稿截稿日期

  • 11月30日 2022

    终稿截稿日期

主办单位
IEEE DEIS
承办单位
Chongqing University
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