730 / 2022-03-31 19:32:48

Topology optimization of a 252 kV GIS supporting insulator for addressing electrode/epoxy interfacial stresses

Topology optimization,insulator,interfacial stresses

IEEE ICHVE 2022 / 1-PAGE ABSTRACT

Topology optimization of a 252 kV GIS supporting insulator for addressing electrode/epoxy interfacial stresses

Peng Sun, Jin-Shu Li, Jun-Hong Chen, Wen-Dong Li, Chao Wang, Jun-Hao Dong, Jun-Bo Deng, Guan-Jun Zhang.

State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China

Sunpeng1069@stu.xjtu.edu.cn

Purpose/Aim

Complex service environments subject the GIS supporting insulators to a variety of hazards concurrently. Intensified electrical and mechanical stresses at electrode/epoxy interface could cause insulation failure, incurring catastrophic consequences to the power system. Topology optimization method was adopted to address the interfacial stresses by optimizing spatial distribution of material properties.

Experimental/Modeling methods

A simplified two-dimensional simulation model of a 252 kV supporting insulator was established and it effectiveness was validated by comparing with the actual three-dimensional model. Firstly, with the aim of reduction electrode/epoxy interfacical electric field, relative permittivity inside the insulator was optimized based on Solid Isotropic Microstructures with Penalization (SIMP) method. Influence of design parameters on the optimization results were discussed. Subsequently, according to the optimal results, a graded structure including high permittivity region and low permittivity region was extracted for fabrication convenience. Finally, to further relieve interfacial mechanical stress, Young modulus of high permittivity region was optimized by parametric sweep method.

Results/discussion

The maximum electric field (E_max) at electrode/epoxy interface reduces from 18.5 kV/mm to 13 kV/mm when aligning continuous permittivity distribution ranging from 5.8 to 11.3. In the case of the simplified discrete permittivity distribution model, E_max reduces to 12.1 kV/mm. Additionally, with the appropriate selection of the Young modulus, mechanical stresses at the interface also exhibits a significant improvement compared to the uniform insulator.

Conclusions

Numerical results indicate that the designed graded supporting insulator possesses improved electric field and mechanical stress distribution compared with traditional uniform insulator. It is believed that this effective design approach overcomes the challenges of conventional field optimization techniques and shows huge potential to be used in industrial applications.

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