The 2019 Silicon Nanoelectronics Workshop (SNW) will be held at Rihga Royal Hotel Kyoto, Japan on June 9-10, 2019 just prior to VLSI Symposium on Technology as a Satellite Workshop of the VLSI Symposia.
The workshop will focus on silicon-related nanoelectronics to bridge a gap between the Si nano-technology and the VLSI world. The first Silicon Nanoelectronics Workshop was successfully held in June, 1996 at Honolulu, Hawaii, USA. The 2019 Silicon Nanoelectronics Workshop will be the 24th in a series of annual workshops.
The workshop will cover various aspects of VLSI-related silicon nanoelectronics. Areas of interest include, but are not limited to:
- Sub-10 nm transistors employing conventional and novel architecture including non-classical structures, novel channel and source/drain materials, non-thermal injection mechanisms
- Device physics of nanodevices including quantum effects, nonequilibrium and ballistic transport
- Modeling and simulation of nanoscale devices
- Extreme processing of nanostructures, including nanopatterning
- Junction and insulator materials and process technology for nanodevices
- Nanoscale surface, interface, and heterojunction effects in nanodevices
- Device scaling issues including doping fluctuations and atomic granularity
- Novel architectures for nanodevices including quantum computing
- Optoelectronics using silicon nanostructures
- Devices for heterogeneous integration on silicon, including 2D materials, Ge and III-V, CNT, spin-based devices, MEMs and NEMS, etc.
- Environmental devices which contribute to low-carbon society (wireless sensors, energy harvestors, steep slope devices, etc.)