310 / 2017-12-08 11:39:23
High Efficiency Quasi Class-J GaN PA with 1.8-3.0GHz Bandwidth
Class J PA,GaN transistor,transmission line,impedance matching,wideband
终稿
Chenxi Huang / Xi'an Jiaotong University
Zeqiang Chen / Xi'an Jiaotong University
Peng Li / Xi’an Jiaotong University,
Qin Xia / Xi’an Jiaotong University
Li Geng / Xi'an Jiaotong University
Abstract—We present a design and implementation of a broadband high efficiency GaN Power amplifier (PA). The PA is based on Class-J continuous operation principle which using a short-circuited quarter-wavelength transmission line to bias the real part of the second harmonic impedance to be zero. And then, the optimum output fundamental impedance are matched by load-pull method with no need of internal parasitic parameters of the power transistor. The designed PA is work in a quasi Class-J mode which has high efficiency. After that, a wideband low-pass network of transmission lines is applied for output matching network in order to increase bandwidth. Simulation result show that the PA achieves output power of 39-41.5dBm in 1.8-3.0GHz with 60%-75% drain efficiency.
重要日期
  • 会议日期

    05月17日

    2018

    05月19日

    2018

  • 12月08日 2017

    摘要截稿日期

  • 01月30日 2018

    摘要录用通知日期

  • 02月10日 2018

    初稿截稿日期

  • 02月10日 2018

    终稿截稿日期

  • 05月19日 2018

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE POWER ELECTRONIC SOCIETY
中国电源学会
中国半导体产业创新联盟
承办单位
西安交通大学
西安电子科技大学
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