255 / 2017-11-22 22:58:44
Optical Coherence Tomography-Based IGBT Non-Destructive Testing
Insulated Gate Bipolar Transistor (IGBT),Optical Coherence Tomography (OCT),Non-Destructive Testing
终稿
Chengmin Li / Zhejiang University
Wuhua Li / Zhejiang University
Weifeng Hu / State Grid Jiangsu Electric Power Co., Ltd.
ZHIYI ZHAO / University of Liverpool
Yihua Hu / University of Liverpool
Yaochun Shen / University of Liverpool
Insulated gate bipolar transistor (IGBT) modules are key components in power electronic converters. The wire-bond packaging failures of IGBT module, such as bond wire related failures, will affect the reliability of the IGBT modules. Therefore, the reliability issues of the wire-bond IGBT module are worth being concerned. In this paper, a non-contact and non-destructive testing technology capable of quantitatively measuring the shape and size of the critical components of IGBT module is proposed. The proposed technology is based on the novel line-field optical coherence tomography (LF-OCT), which can capture a whole B-scan map in a single-shot fashion. The LF-OCT system is capable of micrometre imaging resolution and fast data acquisition, which are suitable for the non-destructive testing (NDT) of IGBT modules. The results indicate that the LF-OCT system has been successfully applied to inspect the critical components in the IGBT module. The mechanical parameters of the components can be provided accurately by the LF-OCT system.
重要日期
  • 会议日期

    05月17日

    2018

    05月19日

    2018

  • 12月08日 2017

    摘要截稿日期

  • 01月30日 2018

    摘要录用通知日期

  • 02月10日 2018

    初稿截稿日期

  • 02月10日 2018

    终稿截稿日期

  • 05月19日 2018

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
IEEE POWER ELECTRONIC SOCIETY
中国电源学会
中国半导体产业创新联盟
承办单位
西安交通大学
西安电子科技大学
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