The SISC provides a unique forum for device engineers, solid-state physicists, and materials scientists to discuss issues of common interest. Principal topics for discussion at SISC are semiconductor/insulator interfaces, the physics of insulating thin films, and the interaction among materials science, device physics, and state-of-the-art technology.
The first SISC meeting was held in 1965 and attendance was by invitation. The upcoming conference, now public, will be held in San Diego, right after the IEDM. An important goal of the conference is to provide an environment that encourages interplay between scientific and technological issues. Invited and contributed talks, as well as a lively poster sessions, are presented in an informal setting designed to encourage discussion, and conference participants enjoy numerous opportunities for social gatherings with renown scientists and engineers.
The conference addresses a wide range of interface-related topics ranging from the traditional silicon-based devices, including the SiC and SiGe systems, to high-mobility semiconductor interfaces and emerging areas beyond the state-of-the-art. Wednesday tutorial lecture, invited and contributed talks are complemented by informal events designed to encourage lively discussion and debate
Generous hospitality allows attendants to focus on enjoying the conference. Hors d’oeuvres, wine, and cheese encourage interaction among poster authors and other conference participants at Thursday’s and Friday’s poster sessions. On Friday evening the conference hosts a banquet and awards ceremony, complete with the now-famous (and always riotous) limerick contest. The limericks never fail to give the conference presentations, people and events an entirely new perspective!
This year's SISC will continue the tradition of presenting an award memorializing Prof. E. H. Nicollian. The award will be given for the best student presentation. Ed Nicollian was a pioneer in the exploration of metal oxide semiconductor (MOS) systems. His contributions were important to establishing SISC in its early years, and he served as the Technical Chair in 1982. With John Brews, he wrote the definitive book MOS Physics and Technology.
The program includes talks and poster presentations (theory and experiment) from all areas of MOS science and technology, including but not limited to:
SiO2 and high-k dielectrics on Si and their interfaces
Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, SiC, etc.)
MOS gate stacks with metal gate electrodes
Stacked dielectrics for non-volatile memory
Oxide and interface structure, chemistry, defects, and passivation: theory and experiment
Electrical characterization, performance and reliability of MOS-based devices
Surface cleaning technology and impact on dielectrics and interfaces
Dielectrics on nanowires, nanotubes, and graphene
Oxide electronics and multiferroics
Interfaces in photovoltaics, e.g. Si passivation
2D materials and devices and their interfaces
12月08日
2016
12月10日
2016
摘要截稿日期
注册截止日期
2025年12月17日 美国 San Diego
2025 IEEE 56th Semiconductor Interface Specialists Conference (SISC)2019年12月11日 美国
2019 IEEE 50th Semiconductor Interface Specialists Conference2018年12月05日 美国
2018 IEEE 49th Semiconductor Interface Specialists Conference2017年12月06日 美国 San Diego
2017 IEEE 48th Semiconductor Interface Specialists Conference2014年12月10日 美国
2014年IEEE第45届半导体界面专家会议2013年12月04日 美国
2013 IEEE第44届半导体界面专家会议
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