The European Conference on Silicon Carbide and Related Materials (ECSCRM) is a highly-anticipated event, held every two years, that represents an important international forum that brings together world-leading specialists working in different areas of wide-bandgap semiconductors. Experienced researchers, experts from leading companies and young students interested in this specific scientific domain have a unique opportunity to exchange their views and ideas on the subject in a beautiful environment.
The ECSCRM2016 will be held in Greece, in the Porto Carras Grand Resort located in Sithonia, Halkidiki. Sithonia is one of Halkidiki’s peninsulas offering exquisite scenery with the unique combination of clear blue sea and dark green pine trees reaching out to the water over the white sand.
The organizers have the pleasure of inviting you to participate in ECSCRM2016 and look forward to welcoming you at a beautiful venue for an exciting conference.
Fundamentals (theoretical and experimental)
Bulk and epitaxial growth
Materials grown on SiC (graphene, III-nitrides and diamond)
Material characterization
Surfaces and interfaces
Device fabrication processes
Devices (power switching, RF power, high-temperature and radiation-resistant devices, sensors, etc.)
Device physics (measurement, modeling, simulation and reliability)
Packaging, modular and circuit technology
Applications
Related materials (wide bandgap semiconductors, III-nitrides and diamond)
09月25日
2016
09月29日
2016
注册截止日期
2016年10月03日 希腊 Thessaloniki,Greece
第11届欧洲航天动力会议
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