Challenges in producing clean energy while maintaining a clean environment is being vigorously pursued worldwide. One of the most promising approaches to producing clean energy is utilizing photovoltaic technology, however, while a plethora of activities are performed in the photovoltaic area, there seems to be much less activity in related areas, making it possible to reduce the overall cost of delivering clean energy and improving system efficiency. Reducing cost requires technological advancement in variety of areas such as solar cells, inverter electronics, power management, storage, and smart grid. This conference is intended to focus on wide-bandgap materials and devices for power electronic applications. Wide bandgap semiconductors are materials that possess bandgaps significantly greater than those of silicon. An example of successful WBG materials is Gallium nitride (GaN), the material enabling the ultra-high efficiency light emitting diodes (LEDs). Device technologies based on such material platforms promises to deliver cost-effective performance that is many orders of magnitude better than the current Si devices. Recent improvements in the performance and reliability of wide-bandgap (WBG) materials and devices make it a promising technology to consider for power circuits and clean energy applications. WBG enable power electronic components to be smaller, cheaper, faster, more reliable and efficient than their silicon-based counterparts because of reduced energy losses, higher voltage-, temperature- and frequency-operation and improved power quality. It is expected that new research on WBG material will spur innovations in the next generation of clean energy power electronics, alternate energy vehicles and smart grid technology. The goal of realizing WBG power devices requires solutions to many complex engineering problems. Original unpublished contributions report recent advances along these lines in addition to review papers that summarize the evolution of the development of any particular aspect of these areas. All abstracts will be reviewed for originality and merit.