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Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs
编号：88 访问权限：仅限参会人 更新：2021-08-14 09:41:54 浏览：598次 口头报告

报告开始：2021年08月27日 15:00（Asia/Shanghai）

报告时间：15min

所在会场：[Room1] Oral Session 1 [S3&S4] WBG Device Applications, Package Design & Analysis

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摘要
This paper presents a Hard Switching Fault (HSF) detection technique for SiC MOSFETs. The reliability of SiC MOSFETs under short circuit conditions is a crucial concern and can lead to failure. The proposed method uses only the device voltage sensing to detect the HSF condition. Instead of fixed blanking time present in the desaturation method, the proposed method adaptively changes the blanking time during every switching cycle. By this, faster detection of the shoot-through event can be achieved and it can reduce the magnitude of the fault peak current. The experimental verification of the proposed method was carried with a discrete 1kV, 32A SiC MOSFET. The results show satisfactory operation of the proposed method,where the HSF event is detected within few tens of nanoseconds.
 
关键词
Short-circuit test;HSF;Hard Swiching Fault;SiC MOSFET;Adaptive Time
报告人
Saravanan Dhanasekaran
Research Scholar Indian Institute of Technology Madras

I received the B.E degree in Electrical and Electronics Engineering from Sri Sivasubramaniya Nadar College of Engineering, Chennai, India in 2017. I am currently working toward the M.S degree in power electronics with the ElectricalDepartment, Indian Institute of Technology, Madras, India. My research interest includes the  Active Gate Drivers for wide bandgap devices in high-power converters. 

稿件作者
Saravanan Dhanasekaran IIT Madras
Vamshi Krishna Miryala Indian Institute of Technology Madras
Kamalesh Hatua Indian Institute of Technology Madras
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重要日期

  • 会议日期

    08月25日

    2021

    至

    08月27日

    2021

  • 04月21日 2021

    摘要截稿日期

  • 05月15日 2021

    摘要录用通知日期

  • 06月25日 2021

    终稿截稿日期

  • 08月24日 2021

    报告提交截止日期

  • 08月27日 2021

    注册截止日期

主办单位
IEEE
IEEE ELECTRONIC DEVICE SOCIETY
承办单位
Huazhong University of Science and Technology
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