The IEEE International Integrated Reliability Workshop (IIRW) originated from the Wafer Level Reliability Workshop in 1982. The IIRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.
Tutorials, paper presentations, poster sessions, moderated discussion groups, special interest groups, and the informal format of the technical program provide a unique environment for understanding, developing, and sharing reliability technology and test methodologies for present and future semiconductor applications as well as ample opportunity for open discussions and interactions with colleagues.
Hot reliability topics for the workshop include: SiGe and strained Si, III-V, SOI, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, organic electronics, emerging memory technologies (RRAM etc.) and future "nano"-technologies, NEMS/MEMS, photovoltaics, transistor reliability including hot carriers and NBTI/PBTI, Cu interconnects and low-k dielectrics, product reliability and burn-in strategy, impact of transistor degradation on circuit reliability, reliability modeling and simulation, optoelectronics, single event upsets, as well as the traditional topics of wafer level reliability (WLR) and built-in reliability (BIR).
We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics:
10月07日
2018
10月11日
2018
摘要截稿日期
初稿录用通知日期
初稿截稿日期
终稿截稿日期
注册截止日期
2017年10月08日 美国
2017年IEEE国际综合可靠性研讨会2016年10月09日 美国 South Lake Tahoe,USA
2016 IEEE International Integrated Reliability Workshop2014年10月12日 美国
2014年IEEE国际综合可靠性研讨会2013年10月13日 美国
2013 IEEE国际综合可靠性研讨会
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