The symposium aims to gather researcher working on semiconductor as well as inorganic-organic hybrid architectures. Whereas classical semiconductor growth, fabrication and device processing builds the fundament of an advanced nanotechnology with broad applications, extensions to the classical planar semiconductor concepts have been proposed and established in the last years. These include the growth of non-planar structures, advanced 2D materials like semiconductor nanomembranes, the use of self-formed 3D nanostructures (nanowires) as well as advanced hybrid systems combining classical inorganic materials with organic semiconductors for a new device generation. The symposium offers a forum, where these communities can meet and discuss these novel approaches from material growth and characterization, over nanostructure fabrication to complete device architectures.
Advanced materials for Silicon technology: Semiconductor-On-Insulator, high mobility materials, strained Si, SiGe and SiC alloys, high-k and low-k dielectrics, gate stack, doping, metallization, epitaxy, materials integration.
Thin-films technology and characterization: MBE, PECVD, LPCVD, ALD, Magnetron sputtering
Surfaces and interfaces
III-V semiconductors, Group III Nitrides and Dilute Nitride Semiconductors, Silicon Carbide, Oxide Semiconductors and other compound semiconductors
Devices: CMOS scaling and alternative architectures, flexible electronics, sensors, micro and nanoelectromechanical systems (MEMS/NEMS)
Low dimensional semiconductor and interconnect structures: two, one and zero dimensional systems, quantum wells
New materials for electronics and photonics
Organic electronics: electronic polymers, molecular devices, OLEDS.
Nanomembranes architectures and devices
09月25日
2016
09月29日
2016
摘要截稿日期
注册截止日期
留言