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活动简介

The 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) is the premier biennial meeting covering all aspects of the latest SiC research and development. Scientists, engineers, and students in the SiC field will gain insights into how challenges and advances in one subfield motivate research in other subfields through a combination of tutorials, industrial talks and presentations of the latest research and development from the SiC community.

The Conference theme—From Niche to Mainstream—will provide existing practitioners, as well as those transitioning to the field, with a technical program that identifies materials and device challenges, describes novel device and materials approaches, and discusses applications that are driving the advancement of SiC technology.

Held September 17-22, 2017, in Washington, DC, at the Wardman Park Marriott, the Conference continues its traditional rotation among Asia, Europe and the US.

征稿信息

征稿范围

  • Epitaxial Growth

  • Bulk Growth

  • Defect Characterization

  • New WBG Materials

  • Processing and Fabrication

  • Device Characterization

  • Power Applications

  • Novel Devices

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重要日期
  • 会议日期

    09月17日

    2017

    09月22日

    2017

  • 09月22日 2017

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