For more than four decades, silicon has been used as the material to fabricate integrated circuits which are now ubiquitously used in almost all electronic products. Today, the market demands electronic chips that are significantly more power efficient and more diverse in functionalities. To meet these challenges, new materials such as III-V, Ge, GaN, SiC, graphene and transition metal dichalcogenides are being investigated for logic, memory, power and photonic applications, with the aim of integrating multiple functional blocks on the chip. A multidisciplinary effort is ongoing worldwide to explore and evaluate new materials systems. This symposium seeks to convene scientists and engineers working on various aspects of these new materials; physics, chemistry, growth, interfaces, doping, metallization, process integration and characterization to discuss their outstanding fundamentals and bottleneck issues. Contributed abstracts in this symposium will be highlighted by invited speakers from both academia and industry to accelerate the progress in this field for the adoption of new materials in beyond silicon electronics.
Topics will include:
Theory and modeling of materials for beyond Si electronics (logic, memory, power and photonics)
Structural, optical and transport propertie s for III-V, Ge, GaN, SiC, graphene and TMD
Approaches to growth for III-V, Ge, GaN, SiC, graphene and TMD: MBE, MOCVD, CVD and ALD
Surface treatments and chemical functionalization of non-silicon materials
Metal contacts to non-silicon semiconductors including materials, interfaces and doping
Gate-stack materials and interfaces on non-silicon semiconductors including High K dielectrics, oxide stacks and metal gates
04月17日
2017
04月21日
2017
摘要截稿日期
注册截止日期
留言