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活动简介

For more than four decades, silicon has been used as the material to fabricate integrated circuits which are now ubiquitously used in almost all electronic products. Today, the market demands electronic chips that are significantly more power efficient and more diverse in functionalities. To meet these challenges, new materials such as III-V, Ge, GaN, SiC, graphene and transition metal dichalcogenides are being investigated for logic, memory, power and photonic applications, with the aim of integrating multiple functional blocks on the chip. A multidisciplinary effort is ongoing worldwide to explore and evaluate new materials systems. This symposium seeks to convene scientists and engineers working on various aspects of these new materials; physics, chemistry, growth, interfaces, doping, metallization, process integration and characterization to discuss their outstanding fundamentals and bottleneck issues. Contributed abstracts in this symposium will be highlighted by invited speakers from both academia and industry to accelerate the progress in this field for the adoption of new materials in beyond silicon electronics.

征稿信息

重要日期

2016-10-13
摘要截稿日期

征稿范围

Topics will include:

  • Theory and modeling of materials for beyond Si electronics (logic, memory, power and photonics)

  • Structural, optical and transport propertie s for III-V, Ge, GaN, SiC, graphene and TMD

  • Approaches to growth for III-V, Ge, GaN, SiC, graphene and TMD: MBE, MOCVD, CVD and ALD

  • Surface treatments and chemical functionalization of non-silicon materials

  • Metal contacts to non-silicon semiconductors including materials, interfaces and doping

  • Gate-stack materials and interfaces on non-silicon semiconductors including High K dielectrics, oxide stacks and metal gates

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重要日期
  • 会议日期

    04月17日

    2017

    04月21日

    2017

  • 10月13日 2016

    摘要截稿日期

  • 04月21日 2017

    注册截止日期

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