活动简介
The Lester Eastman Conference on High Performance Devices is a biennial conference. It was officially renamed in 2002 from the IEEE-Cornell Conference on High Performance Devices to honor Professor Lester Eastman, a pioneer in the field of high performance devices based on compound semiconductors. In 1967, Professor Eastman originated the biennial IEEE-Cornell Conference in Microwave Semiconductors shortly after he started GaAs research at Cornell in 1965. The conference was later renamed the IEEE-Cornell Conference on High Performance Devices. Professor Eastman graduated 125 Ph.D. students, more than 40 M.S. students, and hosted more than 80 postdocs and visiting scientists between 1958 and 2010. Some of the legendary contributions from the Eastman group include high quality GaAs epitaxy, delta-doping, the first lattice-matched InGaAs channel HEMT, T-gate, ballistic devices and polarization effects in GaN.
征稿信息
重要日期
征稿范围
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High frequency devices: high frequency electronics, Schottky and BWO devices, vacuum electronics, high frequency passive components
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Power switching and energy-efficient devices: high power electronics, normally-off devices, bioinspired energy storage, wide band gap electronics
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Devices for digital logic: low power and energy efficient logic switches, new materials, phenomena, and devices concepts for next-generation logic
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Optical emitters: infrared emitters for communication and sensing applications, LEDs for solid state lighting and visible light-based communication, ultraviolet LEDs for disinfection and sensing, lasers, quantum cascade lasers
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Photovoltaics and photodetectors: high efficiency and flexible photovoltaics, photonic techniques for energy generation and transmission, high quantum efficiency photodetectors, avalanche photodiodes
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Bioelectronics, MEMS: bioelectronics, chemical/biological sensors, MEMS devices/systems
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重要日期
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会议日期
08月02日
2016
至08月04日
2016
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05月20日 2016
摘要截稿日期
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06月15日 2016
摘要录用通知日期
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08月04日 2016
注册截止日期
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