Topics include, but are not limited to

• Advanced SOI materials and wafers

• New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other 2D materials

• Properties of ultra-thin films and buried oxides, defects, interface quality

• Thin gate dielectrics: high-k materials for switches and memory

• Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory (DRAM, Non-Volatile, SRAM, ReRAM...) applications

• Physics mechanisms and innovative SOI-like devices

• Alternative transistor architectures including FDSOI, DGSOI, FinFET, MuGFET, vertical MOSFET, Nanowires, FeFET and tunnel FET structures, MEMS/NEMS, Beyond-CMOS nanodevices

• New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain for Sensing, Energy harvesting, RF, High voltage, Imagers, Electronic cooling, etc.

• CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling

• Three-dimensional integration of devices and circuits, heterogeneous integration

• Transport phenomena, compact modeling, device simulation, front- and back-end fabrication process simulation

• Advanced test structures and characterization techniques, parameter extraction, reliability and variability issues for new materials and novel devices