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活动简介

The ICSICT-2016 conference is the 13th in the series aiming to provide an international forum for the presentation and discussion of recent advances in solid-state and integrated circuit technology. The conference will be held on Oct.25-28, 2016 in Hangzhou, China. All aspects of solid-state devices, circuits, processing technologies, materials and other related research are within the scope of the conference. The three days of contributed and invited presentations on the latest developments in diverse fields given in oral and poster sessions, panel discussions on leading edge technology issues, and other activities will provide extensive opportunities for technical information exchange as well as a stimulating environment for mutual communication among participants. An exhibition of equipment and materials for solid state and integrated circuit technologies will be held concurrently with the conference. In addition, there will be discussions devoted to opportunities for cooperation and joint ventures in the microelectronics business in China. Excellent Student Paper Award will be presented at the closing of the conference.

征稿信息

重要日期

2016-06-30
摘要截稿日期
2016-08-15
初稿截稿日期
2016-09-15
初稿录用日期
2016-08-15
终稿截稿日期

征稿范围

VLSI Technologies

  • Channel Engineering

  • High-k/Metal gate Technology

  • Advanced Source/Drain Technology

  • Interconnect Technology

  • Advanced 3D Integration

  • Novel Process Technologies

  • Ultra-Thin Body Transistors

  • High Performance CMOS Platforms

  • CMOS Like Novel Devices

  • Advanced FinFETs and Nanowire FETs

  • CNT, MTJ Devices and Nanowire Devices

  • Low- Power and Steep Slope Switching Devices

  • 2D Devices and Technologies

  • Advanced Technologies for Ge MOSFETs

  • Organic semiconductor devices and technologies

  • Compound semiconductor devices and Technology

  • Ultra High Speed Transistors, HEMT/HBT etc. 

  • Photoelectron Devices

  • Advanced Power Devices and Reliability

  • Flash Memory

  • IT Magnetic RAM

  • Resistive RAMs

  • Phase Change Memory

  • 3-Dimensional Memory

  • MEMS Technology

  • Thin Film Transistors

  • Sensors

  • PV and Energy Harvesting

  • Front End of Line (FEOL) Reliability

  • Memory Reliability

  • Back-End of Line and ESD Reliability

  • Device Simulation & Modeling

  • Process Simulation & Modeling

  • Artificial Intelligence (Process & Device)

  • Internet of Things  (Process & Device)

 

VLSI Circuits & ICCAD

  • Processors

  • Analog Circuits

  • SOC

  • PLL and CDR

  • Low-Power Nyquist ADCs

  • Digital Circuits Resilient

  • High-Resolution and High Speed Data Converters

  • Digital Chip-to-Chip and On-Die Interfaces

  • Advanced Clock

  • Artificial Intelligence  (Circuits & System)

  • Internet of Things (Circuits & System)

  • FPGA

  • Memory Circuits

  • Advanced Transceivers Techniques

  • EDA

  • RF Circuits and Systems

  • Interference Robust RF Receivers

  • Signal Processing

  • System-Level Modeling & Simulation/Verification

  • System-Level Synthesis & Optimization

  • High-Level/Behavioral/Logic Synthesis & Optimization

  • Fhysical Design

  • DFM

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重要日期
  • 会议日期

    10月25日

    2016

    10月28日

    2016

  • 06月30日 2016

    摘要截稿日期

  • 08月15日 2016

    初稿截稿日期

  • 08月15日 2016

    终稿截稿日期

  • 09月15日 2016

    初稿录用通知日期

  • 10月28日 2016

    注册截止日期

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