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电子元器件辐射效应国际会议(ICREED)会议将针对电子材料、元器件、电路、传感器及系统等的辐射效应开展广泛的学术讨论,主要涉及辐射环境下电子材料、器件及系统的辐射损伤效应和机理、加固工艺、加固设计及评价技术。会议通过口头报告、展板展示及圆桌会议等方式进行交流。 本次会议由中国核学会辐射物理分会发起,哈尔滨工业大学主办,并由强脉冲辐射环境模拟与效应国家重点实验室、模拟集成电路国家级重点实验室及山东航天电子技术研究所共同承办。会议将邀请美国、德国、欧空局、俄罗斯、乌克兰及国内著名空间辐射效应专家作特邀报告。 The aim of the International Conference on Radiation Effects on Electronic Devices (ICREED) is to provide technical interchange, presentation and discussion of the latest advances in the field of radiation effects on semiconductor devices for space-borne electronics. Papers on electronic and photonic materials, devices, circuits, and sensors are encouraged. The scope of the conference encompasses basic research, device characterization and device qualification for producing radiation tolerant devices for space, aeronautical or terrestrial applications. The conference technical program will feature oral and poster sessions and round tables. The ICREED is sponsored by the Radiation Physics Institute of Chinese Nuclear Society, organized by Harbin Institute of Technology, and co-undertaken by the State Key Laboratory of Intense Pulsed Radiation Simulation and Effects, the National Laboratory of Analog Integrated Circuits, and the Shandong Aerospace Electro-technology Institute. In the conference, several leading experts from the United States of America, Germany, ESA, Russia, Ukraine and China will be invited for the invited talks

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重要日期
  • 会议日期

    10月19日

    2015

    10月21日

    2015

  • 10月21日 2015

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