Energy efficiency in power distribution and conversion more than ever relies on semiconductor power switching transistors, solar cells, and light emitting diodes. Be they highest voltage blocking normally-off switches for hybrid cars, ultralow cost solar collection materials or tunable color solid state lighting sources - they all have in common that primarily and foremost their performance is controlled by defects in semiconductors.
This meeting therefore aims to bring together the worldwide leading scientists on the topic as well as their hopeful aspirants to a week of off-the records intensive discussion and thought exchange. By blending lecture hall discourse, social gatherings, and sportive outings we will be able to share and learn the latest of practical and academic concern in the performance of a wide range of semiconductors.
We plan to invite leading experts from the full range of industry to academia to cover the topics of wide bandgap nitride and oxide semiconductors, the graphene-like layered materials, novel photovoltaic materials, organic semiconductors and the likes in bulk, film, or nanostructured forms. We anticipate to cover the topics of defect formation, characterization, and avoidance. This includes all relevant aspects of point, line, and cluster defects, their detection, and their relevance to the desired performance.
The meeting is scheduled for the week leading up to the International Conference on the Physics of Semiconductors, ICPS-2014 in Austin Texas at our new location just outside of Boston, MA.
To assure the best possible program, we invite free-form nominations of strong speakers on the topics directly to the chair.
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