As the scaling down of silicon-based devices is reaching physical and technological limits, other materials are actively being studied in order to keep the miniaturisation pace. Among these, single walled carbon nanotubes (SWNTs) and more recently graphene, have attracted a huge attention. SWNTs are one-dimensional molecular structures that can be synthesised routinely with diameters in the nanometer range. They exhibit unique electronic properties that make them highly promising for device fabrication beyond the CMOS era. Exceptional SWNT-based field-effect transistor (FET) characteristics have already been published, that outperform by far those of state-of-the-art Si MOSFETs. Optoelectronic devices (LEDs and photodetectors) have also been demonstrated. However, major problems are slowing down the development of nanotube electronics and optoelectronics, such as the non-uniformity of the SWNT material after synthesis (mixtures of metallic and semiconductor specimens are invariably obtained), the difficulty of making ohmic contacts (particularly to SWNTs with diameters of 1nm or below which are technologically relevant) and above all the formidable challenge of organising SWNTs in dense arrays, compatible with modern ULSI device densities. Actually, in order to circumvent the organisation problem, materials and device scientists are more and more using nanotube mats (2D random networks) for device fabrication, with of course degraded characteristics. Such devices can be used for chemical or biological applications. On the other hand, multi walled carbon nanotubes (MWNTs) have extensively been studied for field emission applications over the past few years, and field-emitted current values around 100 ?A/tube are now routinely reached in cold cathodes. Also, electron emission can be modulated at microwave frequencies, which opens up new prospects for electron tubes. Recently, graphene (an unrolled, flat carbon nanotube) and few-layer graphene materials have appeared and are thoroughly studied for transistor (in the form of narrow ribbons or bilayer material) and conductive thin film applications. The discovery of graphene in 2004 has been rewarded by the 2010 Nobel Prize in Physics. One of the interests of graphene, a zero gap semiconductor, is the fact that carriers exhibit very high mobilities, even at room temperature. Moreover, graphene can be processed and "carved" using the well know paradigm and tools developed by the semiconductor industry, which is a huge advantage over CNTs. The creation of a forbidden gap in graphene is an active field of research. The purpose of the conference is to provide a broad overview of the state-of-the-art and perspectives of carbon nanotubes, and graphene as well as few layers graphene films, bringing together experts from different communities: materials science and chemistry as well as biology, device physics, nanofabrication and nanoorganisation, industrial developments, etc.