AboutComponents, Circuits, Devices and Systems; Power, Energy and Industry Applications
Keywords:Silicon carbide MOSFETs ,Gallium nitride HEMTs,Gallium Oxide diodes and transistors,Packaging and integration,Gate-drivers,Power converters,Ultra-wide-band-gap,Characterization techniques,Device robustness,Device Reliability,Bi-directional switches,
Scope:Information exchange and discussions on state-of-the-art wide-band-gap power semiconductor devices, their packaging and application technologies. Focus areas of particular interests: monolithic integrated bi-directional switches; use of WBG devices in solid-state transformers, future power supplies for (AI) data-centres and electric transportation (including battery chargers); wireless and double-sided cooling packaging solutions; active gate-drivers.
Sponsor Type:1
Region10-Asia and Pacific