1742 / 2020-09-29 17:52:02
A Gating Path Optimization Method for Press-Pack IGBT
Driving loop layout,Press-pack IGBT,Stray parameter
终稿
Huaidong Min / Huazhong University of Science and Technology
IGBT devices are widely used in high-voltage and high-power applications. IGBT module has two kinds of packaging structure, which are welded IGBT and press-pack IGBT (PP-IGBT). Since a PP-IGBT module can integrate more chips and diode chips to obtain a large current capacity, it has been widely used in high power applications. However, due to the individual differences of chips in parallel, the stray parameters of the gating loops may be different, which leads to the imbalance of current and thermal problem of PP-IGBT, and eventually lead to the failure or even damage of the device. In this paper, some key factors resulting inconsistency of stray parameters in gating loops are reviewed, and a methodology to make the gating loops more consistent are proposed. The feasibility of the methodology is also verified by ANSYS software simulation.
重要日期
  • 会议日期

    11月02日

    2020

    11月04日

    2020

  • 10月27日 2020

    初稿截稿日期

  • 11月03日 2020

    报告提交截止日期

  • 11月04日 2020

    注册截止日期

  • 11月17日 2020

    终稿截稿日期

主办单位
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
承办单位
Huazhong University of Science and Technology
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