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我的稿件
75
MXene/SiO2 Structure-based RRAM devices for the Application of Neuromorphic Computing终稿

XIAOJUAN LIAN*

Microelectronic Devices and Materials > Advance Memories Technology (Flash, FeRAM, PCM RRAM, MRAM etc.)

74
Principle and design of a high performance analog switch circuit终稿

lin zhang, xiangliang jin*

Microelectronic Devices and Materials > Silicon Integrated Circuits Technologies

72
Effect of Monoethanolamine Stabilizer on the Solution-Processed InGaZnO Thin-film Transistors终稿

Hengda Qiu, Hang Zhou*, Libin Zheng, Hejing Sun, Zihao Liang

Microelectronic Devices and Materials > Nano-Electronic and Nano-Photonic Devices

69
A Full-region Model for Ultra-Scaled MoS2 MOSFET Covering Direct Source-Drain Tunneling终稿

Weiran Cai, Wenrui Lan, Zichao Ma, Mansun Chan, Lining Zhang*

Microelectronic Devices and Materials > Nano-Electronic and Nano-Photonic Devices

68
Low Frequency Noise of the Tunneling Contact Thin-Film Transistors终稿

Yalan Zhang, Xinke Li, Peiwen Wu, Lining Zhang*, Juin J. Liou, Cai Weiran

Microelectronic Devices and Materials > Silicon Integrated Circuits Technologies

66
Thickness-dependent photoresponse of P3HT:PCBM organic photodiode fabricated by drop-casting method终稿

Li Xiang, Hang Zhou*, Xuekai Huang

Microelectronic Devices and Materials > Organic Semiconductor Devices and Technologies

64
Comparison of I-V Curves between Unidirectional SPAD and Bi-directional SPAD in Generalized Memristive Characteristics全文录用

Hao Jianxiu, Jin Xiangliang*

Microelectronic Devices and Materials > Physics and Simulation of Optoelectronic Devices

重要日期

  • 会议日期

    07月10日

    2021

    至

    07月12日

    2021

  • 05月10日 2021

    初稿截稿日期

  • 07月06日 2021

    注册截止日期

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长沙理工大学
协办单位
IEEE Electron Devices Society
IEEE
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