179 / 2019-06-27 20:14:03

Improve the performance of deep ultraviolet semiconductor lasers by optimizing the electron blocking layer

left-side cone EBL, electronic transmission, electron leakage

A method for improving the performance of deep ultraviolet laser devices by improving the electron blocking layer is proposed. It is applied to deep ultraviolet semiconductor laser diodes through the left tapered electron blocking layer (EBL). Compared to the right tapered electron blocking layer and the non-tapered electron blocking layer, the laser of left tapered electron blocking layer device exhibits higher efficiency at the time of installation, indicating a significant increase in electron transfer and holes, which improves the luminous efficiency of the device.