172 / 2019-06-20 23:47:49

Relationship between the Gibbs free energy of oxidation with the resistive switching properties of bi-oxide memristors

Memristors,ReRAMs,Bi-oxide memristors,Oxygen vacancies,Conductive filaments,Gibbs free energy of oxidation

The increasing interest in memristors urges overcoming the reliability issue concerning their performance. Bioxide
configuration of memristors has been proposed as a promising approach. In this work, we implemented several secondary
oxides for HfO2-based memristors. The implemented fabrication steps and electrical performance under DC measurement have been explained in details. We demonstrate a connection between the difference of the Gibbs energy of primary and secondary oxide with the resistive switching, especially for the negative polarity (reset process). We proposed, the different competition of secondary oxide with HfO2 in oxidation, leads to different formation of conductive filament (for varied secondary oxides) in the ultra-thin structured memristors, which eventually affects the performance of the devices.