163 / 2019-06-18 12:33:05

Optimization of thickness in electron blocking layer of AlGaN-based deep ultraviolet laser diodes

laser diodes,electron blocking layer,multiple quantum wells

This paper reports the optimal thickness of the electron blocking layer for AlGaN-based deep UV LDs. By comparing the performance of LDs with electron blocking layer thicknesses of 4 nm, 5 nm, 6 nm, 10 nm, and 15 nm, it is found that when the thickness of the EBL is 5 nm, the electron blocking ability is the strongest, the reason is that the electron concentration in the p-side is the lowest. At this time, the laser has a threshold voltage of 4.54V, a threshold current of 20.62mA, a slope efficiency of 2.09W/A.