162 / 2019-06-18 11:42:52

Positive Shift Suppression in Threshold Voltage of GaN HEMTs by Supercritical Treatment

threshold voltage, positive shift, GaN HEMTs, supercritical treatment

In this paper, we introduced ions into GaN HEMTs by supercritical treatment to suppress the positive shift in threshold voltage. After treatment, threshold voltage drifts (△Vth) under forward gate bias stress decreased from 4.05V to 0.15V, gate leakage current was reduced to 5×10-11A/mm. It was suggested that nitrogen ions could modify interface state traps with a broad distribution of trapping, leading to suppressed gate leakage current and threshold voltage drifts.