152 / 2019-06-17 14:12:14
A Modified LDMOS-SCR with High Holding Voltage for ESD Protection
Electrostatic discharge (ESD),trigger voltage,LDMOS-SCR
全文待审
WenQiang Song / University of Electronic Science and Technology of China
FeiBo Du / University of Electronic Science and Technology of China
ZhiWei Liu / University of Electronic Science and Technology of China
A modified lateral DMOS-SCR with high holding voltage for electrostatic discharge (ESD) protection applications has been proposed in this paper. The proposed MLDMOS-SCR possesses a lower trigger voltage as well as a higher holding voltage, making it very suitable for 18V/20V ESD applications. The operation mechanism of MLDMOS-SCR device is discussed in detail, and the effect of floating P+ region on the MLDMOS-SCR’s I–V characteristics is analyzed by TCAD simulation as well.
重要日期
  • 会议日期

    10月09日

    2019

    10月10日

    2019

  • 07月20日 2019

    初稿截稿日期

  • 10月10日 2019

    注册截止日期

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