125 / 2019-06-04 17:12:56

Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

thin film transistor (TFT),poly-silicon (poly-Si),negative capacitance (NC) effect

In this work, we investigated the negative capacitance (NC) effect of ferroelectric HfAlO on the poly-silicon thin film transistor devices using high-κ HfO2 gate dielectric by simulation. Excellent device performances were achieved, including a high on-state drive current, a high Ion/Ioff of >107 and a low subthreshold swing of 58 mV/dec. These enhanced performances were related to the strong ferroelectric polarization inducing NC effect to obtain excellent gate controllability.