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679
SiC Power Device Evolution Opening a New Era in Power Electronics终稿

Kazuhide Ino*

全体主题 > Power Electronics

662
A 225-mA Binary Searching Digital LDO with Transient Enhancement终稿

Zheyi Yuan, Shiquan Fan*, Li Geng

全体主题 > Power Electronics

661
A Fully Integrated CMOS Active Rectifier-Booster Regulator for RF Energy Harvesting终稿

Zheyi Yuan, Shiquan Fan*, Li Geng

全体主题 > Power Electronics

646
A Snapback-free RC-IGBT with Si3N4 Trench and P-type Pillar终稿

Lei Cui*, Bi Jun Zhang, Peng Fei Wu, Li Ma, Ru Liang Zhang, Zhi Bin Zhao

全体主题 > Power Electronics

638
A step trench and field limiting ring termination structure with n+ short anode region终稿

Wang Cailin*, Ge Jingtao

全体主题 > Power Electronics

637
A Novel Trench Gate MOS Turn-off GCT Structure终稿

Cailin Wang*, Yun Wu

全体主题 > Power Electronics

625
617
A fast off and low current crowding MOS-controlled thyristor with Schottky junction in the OFF-FET终稿

M. H. Tang*, Y. L. Sun, Z. H. Chen, G. Li, Y. G. Xiao, W. Zhou

全体主题 > Power Electronics

592
imulation Study on Super-Junction SiC MOSFET with Different PN Pillar Numbers终稿

Xinyu Guo, Xiaoli Tian*, Yun Bai, Tianmin Lei, Zhonglin Han, Guan Song

全体主题 > Power Electronics

589
Design and fabrication of charge-balanced SGRSO MOSFET终稿

Liu Meng Xin, Ding Yan*

全体主题 > Power Electronics

586
Investigation on Short Circuit Test of 3300 V SiC MOSFET终稿

Hong Chen, Zhonglin Han, Ximing Chen, Yanli Zhao, Yun Bai, Zhengsheng Han*

全体主题 > Power Electronics

581
重要日期
  • 会议日期

    06月12日

    2019

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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