606 / 2019-03-15 21:57:40

A very narrow mesa biased IGBT for ultra-low on-state saturation voltage and a good short circuit ruggedness

Insulated gate bipolar transistor (IGBT), very narrow mesa, saturation voltage, short circuit

全体主题 > Power Electronics

In this paper, a novel CSTBT with very narrow mesa structure is proposed by numerical simulation. The floating pwell region in the proposed structure is connected with the cathode through the very narrow mesa structure to deplete the high dose concentration CS layer. Therefore, the conductivity modulation effect of the proposed structure can be enhanced significantly. Therefore, the proposed structure can achieve ultra-low on-state saturation voltage closed to the theoretical limit without the degeneration of the short-circuit behavior.