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我的稿件
409
Plasma Influences on the Performance of Ti Protected Back-Channel-Etched a-IGZO TFTs终稿

Letao Zhang*, Qian Ma, Shengdong Zhang

全体主题 > Compound Semiconductor Devices

401
A Novel Enhancement-Mode AlGaN/GaN HFET with Double-Barrier Gates-Separating Groove终稿

Yuanjie Lv, Xingchang Fu, Lijiang Zhang, Xianjie Li, Tong Zhang*

全体主题 > Compound Semiconductor Devices

386
Optimal design of power GaN HEMT field plate structure终稿

shuai du, WEILING GUO*, tianyu lin, LIANG LEI

全体主题 > Compound Semiconductor Devices

370
A Non-Ohmic Normally-off GaN RB-MISHEMT Featuring a Gate-Controlled Schottky Tunnel Junction终稿

宜军 施*, Liu Xiyuan, Chen Wanjun, WU Shan, Tangsheng Chen

全体主题 > Compound Semiconductor Devices

367
Comparison of single and double channel AlGaN/GaN HEMTs and MOSHEMTs终稿

Praveen Pal, Yogesh Pratap, Mridula Gupta, Sneha Kabra*

全体主题 > Compound Semiconductor Devices

362
A High Speed High Voltage Normally-off SiC Vertical JFET Power Device终稿

Moufu Kong*, Yunru Hou, Bo Yi, Xingbi Chen

全体主题 > Compound Semiconductor Devices

353
Effect of large C/Si ratio on Morphology and Magnetic Property of 3C-SiC终稿

ying yang*

全体主题 > Compound Semiconductor Devices

346
E-beam fabricated Metal-Semiconductor-Metal (MSM) varactor based on AlGaN/GaN HEMT with rectangular gate of 450nm终稿

Qian Li, Ning An, Jian-Ping Zeng*, Jun Jiang, Li Li

全体主题 > Compound Semiconductor Devices

重要日期

  • 会议日期

    06月12日

    2019

    至

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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Xi'an University of Technology
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